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| DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION PIN The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless 1 2 3 base emitter collector DESCRIPTION Code: N28 telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT23 envelope. PINNING 1 Top view fpage BFR520 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 97 C; note 1 IC = 20 mA; VCE = 6 V IC = ic = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. RBE = 0 CONDITIONS MIN. - - - - 60 - - - - 13 - - - TYP. - - - - 120 0.4 9 15 9 14 1.1 1.6 1.9 MAX. 20 15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 97 C; note 1 open emitter RBE = 0 open collector CONDITIONS MIN. - - - - - -65 - BFR520 MAX. 20 15 2.5 70 300 150 175 UNIT V V V mA mW C C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 20 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz PL1 ITO Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz. 2 BFR520 MIN. TYP. MAX. - 60 - - - - - - 13 - - - - - - 120 1 0.5 0.4 9 15 9 14 1.1 1.6 1.9 17 26 50 250 - - - - - - - 1.6 2.1 - - - UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm output power at 1 dB gain compression third order intercept point IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz note 2 September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 MRA702 - 1 MRA703 400 handbook, halfpage P tot (mW) 300 handbook, halfpage 250 hFE 200 150 200 100 100 50 0 0 50 100 150 T ( o C) s 200 0 10-2 10-1 1 10 I (mA) 102 C VCE = 6 V. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. handbook, halfpage 0.6 MRA704 MRA705 handbook, halfpage 12 Cre (pF) fT (GHz) 8 VCE = 6V 0.4 VCE = 3V 0.2 4 0 0 4 8 VCB (V) 12 0 10-1 1 10 IC (mA) 102 iC = 0; f = 1 MHz. Tamb = 25 C; f = 1 GHz. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. September 1995 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 MRA706 25 handbook, halfpage gain (dB) 20 MSG 15 Gmax 25 gain (dB) 20 MRA707 15 GUM Gmax 10 GUM 10 5 5 0 0 0 10 20 IC (mA) 30 0 10 20 IC (mA) 30 VCE = 6 V; f = 900 MHz. VCE = 6 V; f = 2 GHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. handbook, halfpage 50 MRA708 gain (dB) 40 GUM handbook, halfpage 50 MRA709 gain (dB) 40 GUM 30 30 MSG MSG 20 20 Gmax 10 10 Gmax 0 10 102 103 f (MHz) 104 0 10 102 103 f (MHz) 104 VCE = 6 V; Ic = 5 mA. VCE = 6 V; Ic = 20 mA. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. September 1995 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 handbook, halfpage 5 MRA714 Fmin (dB) 4 Gass 2000 MHz f = 900 MHz 1000 MHz 20 Gass (dB) 15 handbook, halfpage 5 MRA715 Fmin (dB) 4 IC = 5 mA 20 mA Gass 20 Gass (dB) 15 3 10 3 10 2 2000 MHz 1000 MHz 900 MHz 500 MHz 5 Fmin 0 2 20 mA 1 5 mA 5 1 Fmin 0 0 1 10 IC (mA) -5 102 0 102 103 f (MHz) -5 104 VCE = 6 V. VCE = 6 V. Fig.10 Minimum noise figure and associated available gain as functions of collector current. Fig.11 Minimum noise figure and associated available gain as functions of frequency. handbook, full pagewidth stability circle 90 1.0 1 135 pot. unst. region 0.5 2 45 0.8 0.6 0.4 0.2 0.2 Fmin = 1. 1 dB OPT 5 180 0 0.2 0.5 1 F = 1.5 dB F = 2 dB 2 5 0 0 0.2 F = 3 dB 0.5 1 5 -135 2 -45 MRA716 1.0 Zo = 50 . VCE = 6 V; IC = 5 mA; f = 900 MHz. -90 Fig.12 Noise circle figure. September 1995 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 handbook, full pagewidth 90 1.0 1 135 0.5 F = 3 dB F = 2.5 dB F = 2 dB Fmin = 1. 9 dB MS 180 0 Gmax = 9.3 dB G = 9 dB 0.2 G = 8 dB G = 7 dB -135 0.5 1 MRA717 2 45 0.8 0.6 0.4 0.2 0.2 5 0.5 OPT 1 2 5 0 0 5 2 -45 1.0 -90 Zo = 50 . VCE = 6 V; IC = 5 mA; f = 2000 MHz. Fig.13 Noise circle figure. September 1995 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 2 5 0 0 0.2 3 GHz 180 0 0.2 0.5 1 5 40 MHz 0.2 5 -135 0.5 1 2 -45 MRA710 1.0 -90 VCE = 6 V; IC = 20 mA. Zo = 50 . Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 180 50 40 30 20 10 3 GHz 0 -135 -45 -90 VCE = 6 V; IC = 20 mA. MRA711 Fig.15 Common emitter forward transmission coefficient (S21). September 1995 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 handbook, full pagewidth 90 135 45 3 GHz 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 VCE = 6 V; IC = 20 mA. MRA712 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0 0.2 5 40 MHz 3 GHz 0.2 5 -135 0.5 1 2 -45 MRA713 1.0 -90 VCE = 6 V; IC = 20 mA. Zo = 50 . Fig.17 Common emitter output reflection coefficient (S22). September 1995 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFR520 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFR520 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 12 |
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